標題: Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells
作者: Kuo, Cheng-Huang
Fu, Yi Keng
Chang, L. C.
Chen, Yu An
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: InN/GaN;efficiency droop;In rich;localization effect
公開日期: 1-Apr-2014
摘要: Nitride-based light-emitting diodes (LEDs) grown with a structure of InN/GaN matrix quantum-wells (QWs) using metal-organic chemical vapor deposition are fabricated and characterized. The InN/GaN matrix QWs can significantly enhance the formation of phase-separated In-rich regions. Under an injection current of 500 A/cm(2), the LED output power can be enhanced by 26%, and the efficiency droop can be improved as compared with a conventional LED. These improvements could be attributed to the strong localization effect to remove carriers from the confining potential and capture these carriers at nonradiative centers in the active layer.
URI: http://dx.doi.org/10.1109/JQE.2014.2306997
http://hdl.handle.net/11536/23965
ISSN: 0018-9197
DOI: 10.1109/JQE.2014.2306997
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 50
Issue: 4
起始頁: 255
結束頁: 260
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