標題: Low-Temperature Bonded Cu/In Interconnect With High Thermal Stability for 3-D Integration
作者: Chien, Yu-San
Huang, Yan-Pin
Tzeng, Ruoh-Ning
Shy, Ming-Shaw
Lin, Teu-Hua
Chen, Kou-Hua
Chiu, Chi-Tsung
Chuang, Ching-Te
Hwang, Wei
Chiou, Jin-Chern
Tong, Ho-Ming
Chen, Kuan-Neng
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
關鍵字: 3-D integration;Cu/In bonding;interconnect
公開日期: 1-四月-2014
摘要: Low-temperature (170 degrees C) Cu/In wafer-level and chip-level bonding for good thermal budget has been successfully developed for 3-D integration applications. For the well-bonded interconnect, Cu2In and Cu7In3 phases with high melting temperature of 388.3 degrees C and 632.2 degrees C can be formed, indicating high thermal stability. In addition, stable low specific contact resistance of bonded interfaces can be achieved with the values of approximately 0.3 x 10(-8) Omega-cm(2). In addition to exceptional electrical characteristics, the results of electrical reliability assessments including current stressing, temperature cycling, and unbiased HAST show excellent stability of Cu/In bonds without obvious deterioration. The low-temperature Cu/In bonding technology presents good bond quality and electrical performance, and possesses a great potential for future applications of 3-D interconnects.
URI: http://dx.doi.org/10.1109/TED.2014.2304778
http://hdl.handle.net/11536/23951
ISSN: 0018-9383
DOI: 10.1109/TED.2014.2304778
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 61
Issue: 4
起始頁: 1131
結束頁: 1136
顯示於類別:期刊論文


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