標題: Characteristic Evolution from Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film
作者: Fan, Yang-Shun
Liu, Po-Tsun
光電工程學系
Department of Photonics
關鍵字: Al-doped zinc tin oxide (AZTO);one transistor and one resistor (1T1R);resistive-switching random access memory (RRAM);Schottky junction diode;thin-film transistor (TFT)
公開日期: 1-四月-2014
摘要: We demonstrate a metal sandwiched Al-doped zinc tin oxide (AZTO) thin-film device to exhibit a characteristic evolution process from Schottky junction diode to resistive-switching random access memory (RRAM) applications. The proposed TiN/Ti/AZTO/Pt device can initially show good rectifying characteristics and high forward-bias current for Schottky diodes. After applying with an electrically triggered forming process, the transition of electrical behavior occurs and evolves from the diode to RRAM characteristics. The RRAM device exhibits the coexistence of bipolar and unipolar resistive-switching modes through the positive-bias forming and reversed-bias forming process, respectively. In addition, the RRAM device with bipolar mode can perform the functionality of multilevel cell storage, while the one with unipolar mode shows stable resistive-switching performance. Furthermore, one-transistor and one-resistor (1T1R) architecture with an RRAM cell connected with a thin-film transistor (TFT) device is developed in this paper. The TFT device using AZTO film as an active channel layer performs good electrical characteristics for a driver in the 1T1R operation scheme. The integration of AZTO-based electronic devices has great potential for increasing the application diversity of metal oxide AZTO thin film as well as the flexibility of circuit design in the emerging optoelectronic technologies.
URI: http://dx.doi.org/10.1109/TED.2014.2305155
http://hdl.handle.net/11536/23950
ISSN: 0018-9383
DOI: 10.1109/TED.2014.2305155
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 61
Issue: 4
起始頁: 1071
結束頁: 1076
顯示於類別:期刊論文


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  1. 000333464000021.pdf