標題: HETEROJUNCTION BIPOLAR-TRANSISTORS WITH EMITTER BARRIER LOWERED BY DELTA-DOPING
作者: CHEN, HR
HUANG, CH
CHANG, CY
LEE, CP
TSAI, KL
TSANG, JS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-八月-1994
摘要: An Npn heterojunction bipolar transistor with a Si-delta-doped layer at the emitter-base hetero-interface is demonstrated. The Si delta-doped layer reduces the potential spike at the emitter junction. This design reserves the abruptness of the heterojunction, reduces electron barrier and increases the hole barrier simultaneously. Experimental results show that the HBT's turn-on characteristics are greatly improved while the current gain remains high. The offset voltages as low as 44 mV have been obtained. Very high current gains at very low collector current densities are obtained.
URI: http://dx.doi.org/10.1109/55.296218
http://hdl.handle.net/11536/2387
ISSN: 0741-3106
DOI: 10.1109/55.296218
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 15
Issue: 8
起始頁: 286
結束頁: 288
顯示於類別:期刊論文


文件中的檔案:

  1. A1994PB03100008.pdf