Title: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
Authors: Chang, Kuan-Chang
Chen, Jung-Hui
Tsai, Tsung-Ming
Chang, Ting-Chang
Huang, Syuan-Yong
Zhang, Rui
Chen, Kai-Huang
Syu, Yong-En
Chang, Geng-Wei
Chu, Tian-Jian
Liu, Guan-Ru
Su, Yu-Ting
Chen, Min-Chen
Pan, Jhih-Hong
Liao, Kuo-Hsiao
Tai, Ya-Hsiang
Young, Tai-Fa
Sze, Simon M.
Ai, Chi-Fong
Wang, Min-Chuan
Huang, Jen-Wei
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Keywords: Supercritical fluid;RRAM;Hydration-dehydration reaction;Tin doping
Issue Date: 1-Jan-2014
Abstract: We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydration-dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses. The current conduction mechanism of low resistance state in post-treated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction. Furthermore, the current conduction mechanism of high resistance state in the memory device was transferred to Schottky emission from Frenkel-Poole conduction. The phenomena were attributed to the discontinuous metal filament formed by hydration-dehydration reaction in Sn:SiOx thin film through supercritical fluid treatment. Finally, a reaction model was proposed to explain the mechanism of current reduction in Sn:SiOx thin film with supercritical CO2 fluid treatment. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.supflu.2013.09.002
ISSN: 0896-8446
DOI: 10.1016/j.supflu.2013.09.002
Volume: 85
Begin Page: 183
End Page: 189
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