標題: SUBMICRON T-SHAPED GATE HEMT FABRICATION USING DEEP-UV LITHOGRAPHY
作者: CHANG, EY
LIN, KC
LIU, EH
CHANG, CY
CHEN, TH
CHEN, J
材料科學與工程學系
電控工程研究所
Department of Materials Science and Engineering
Institute of Electrical and Control Engineering
公開日期: 1-八月-1994
摘要: A new combination of low/high/low sensitivity trilayer (PMMA/PMIPK/PMMA) resist system was used for deep UV lithography to fabricate submicron T-shaped gate. Gate length as narrow as 0.2 mum is achieved. The GaAs HEMT's with 0.3 mum T-shaped Ti/Pt/Au gate is fabricated using this technology. The HEMT demonstrated a 0.6 dB noise figure and 13 dB associated gain at 10 GHz. This deep UV lithography process provides a high throughput and low cost alternative to E-beam lithography for submicron T-gate fabrication.
URI: http://dx.doi.org/10.1109/55.296215
http://hdl.handle.net/11536/2385
ISSN: 0741-3106
DOI: 10.1109/55.296215
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 15
Issue: 8
起始頁: 277
結束頁: 279
顯示於類別:期刊論文


文件中的檔案:

  1. A1994PB03100005.pdf