標題: Effect of Mg Doping on the Electrical Characteristics of High Performance IGZO Thin Film Transistors
作者: Wu, Hung-Chi
Liu, Tung-Sheng
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2014
摘要: In this work, we report that the electrical characteristics of Indium-Gallium-Zinc-Oxide Thin Film Transistors (IGZO-TFTs) can be improved by Mg doping in the IGZO layer. Several composite IGZO/Mg-doped IGZO channel structures were employed. With appropriate Mg-doped IGZO thickness, the electrical properties such as mobility, subthreshold swing (S.S.) and on/off ratio can be significantly improved by Mg doping. Mg doping in IGZO layer can stabilize device performance whatever the device is stressed under positive gate bias or negative gate bias with illumination. By X-ray photoelectron (XPS) analysis, we observe the presence of Mg can change the oxygen bonding states and influence the properties of IGZO layer. The atomic percentage of Mg in the IGZO layer is about 6.53%. As a result, Mg doping is a useful method to enhance the performance and stability of IGZO-TFTs. (C) 2013 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/23848
http://dx.doi.org/10.1149/2.012402jss
ISSN: 2162-8769
DOI: 10.1149/2.012402jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 3
Issue: 2
起始頁: Q24
結束頁: Q27
顯示於類別:期刊論文


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