標題: Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates
作者: Horng, Ray-Hua
Wu, Bing-Rui
Tien, Ching-Ho
Ou, Sin-Liang
Yang, Min-Hao
Kuo, Hao-Chung
Wuu, Dong-Sing
光電工程學系
Department of Photonics
公開日期: 13-一月-2014
摘要: Light extraction of GaN-based light-emitting diodes grown on Si(111) substrate (GaN-on-Si based LEDs) is presented in this study. Three different designs of GaN-on-Si based LEDs with the lateral structure, lateral structure on mirror/Si(100) substrate, and vertical structure on mirror/Si(100) substrate were epitaxially grown by metalorganic chemical vapor deposition and fabricated using chemical lift-off and double-transfer techniques. Current-voltage, light output power, far-field radiation patterns, and electroluminescence characteristics of these three LEDs were discussed. At an injection current of 700 mA, the output powers of LEDs with the lateral structure on mirror/Si(100) substrate and vertical structure on mirror/Si(100) substrate were measured to be 155.07 and 261.07 mW, respectively. The output powers of these two LEDs had 70.63% and 187.26% enhancement compared to that of LED with the lateral structure, respectively. The result indicated this vertical structure LED was useful in improving the light extraction due to an enhancement in light scattering efficiency while the high-reflection mirror and diffuse surfaces were employed. (C) 2014 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.22.00A179
http://hdl.handle.net/11536/23840
ISSN: 1094-4087
DOI: 10.1364/OE.22.00A179
期刊: OPTICS EXPRESS
Volume: 22
Issue: 1
起始頁: A179
結束頁: A187
顯示於類別:期刊論文


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