Title: Fermi-level shifts in graphene transistors with dual-cut channels scraped by atomic force microscope tips
Authors: Lin, Meng-Yu
Chen, Yen-Hao
Su, Chen-Fung
Chang, Shu-Wei
Lee, Si-Chen
Lin, Shih-Yen
光電學院
光電工程學系
College of Photonics
Department of Photonics
Issue Date: 13-Jan-2014
Abstract: We investigate the electronic properties of p-type graphene transistors on silicon dioxide with dual-cut channels that were scraped using atomic force microscope tips. In these devices, the current is forced to squeeze into the path between the two cuts rather than flow directly through the graphene sheet. We observe that the gate voltages with minimum current shift toward zero bias as the sizes of the dual-cut regions increase. These phenomena suggest that the Fermi levels in the dual-cut regions are shifted toward the Dirac points after the mechanical scraping process. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4862275
http://hdl.handle.net/11536/23838
ISSN: 0003-6951
DOI: 10.1063/1.4862275
Journal: APPLIED PHYSICS LETTERS
Volume: 104
Issue: 2
End Page: 
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