標題: Forming-free bipolar resistive switching in nonstoichiometric ceria films
作者: Ismail, Muhammad
Huang, Chun-Yang
Panda, Debashis
Hung, Chung-Jung
Tsai, Tsung-Ling
Jieng, Jheng-Hong
Lin, Chun-An
Chand, Umesh
Rana, Anwar Manzoor
Ahmed, Ejaz
Talib, Ijaz
Nadeem, Muhammad Younus
Tseng, Tseung-Yuen
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Resistive switching;Space charge-limited conduction (SCLC);Metal-insulator-metal structure;Cerium oxide;Oxygen vacancy
公開日期: 27-Jan-2014
摘要: The mechanism of forming-free bipolar resistive switching in a Zr/CeO (x) /Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrO (y) layer at the Zr/CeO (x) interface. X-ray diffraction studies of CeO (x) films revealed that they consist of nano-polycrystals embedded in a disordered lattice. The observed resistive switching was suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies in the CeO (x) film and in the nonstoichiometric ZrO (y) interfacial layer. X-ray photoelectron spectroscopy study confirmed the presence of oxygen vacancies in both of the said regions. In the low-resistance ON state, the electrical conduction was found to be of ohmic nature, while the high-resistance OFF state was governed by trap-controlled space charge-limited mechanism. The stable resistive switching behavior and long retention times with an acceptable resistance ratio enable the device for its application in future nonvolatile resistive random access memory (RRAM).
URI: http://dx.doi.org/10.1186/1556-276X-9-45
http://hdl.handle.net/11536/23835
ISSN: 1556-276X
DOI: 10.1186/1556-276X-9-45
期刊: NANOSCALE RESEARCH LETTERS
Volume: 9
Issue: 
起始頁: 1
結束頁: 8
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