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dc.contributor.authorChu, Hsueh-Liangen_US
dc.contributor.authorChiu, Shao-Chienen_US
dc.contributor.authorSung, Ching-Fengen_US
dc.contributor.authorTseng, Wellenen_US
dc.contributor.authorChang, Yu-Chuanen_US
dc.contributor.authorJian, Wen-Binen_US
dc.contributor.authorChen, Yu-Changen_US
dc.contributor.authorYuan, Chiun-Jyeen_US
dc.contributor.authorLi, Hsing-Yuanen_US
dc.contributor.authorGu, Frank X.en_US
dc.contributor.authorDi Ventra, Massimilianoen_US
dc.contributor.authorChang, Chia-Chingen_US
dc.date.accessioned2014-12-08T15:35:06Z-
dc.date.available2014-12-08T15:35:06Z-
dc.date.issued2014-02-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nl404601sen_US
dc.identifier.urihttp://hdl.handle.net/11536/23828-
dc.description.abstractDNA is a nanowire in nature which chelates Ni ions and forms a conducting chain in its base-pairs (Ni-DNA). Each Ni ion in Ni-DNA exhibits low (Ni2+) or high (Ni3+) oxidation state and can be switched sequentially by applying bias voltage with different polarities and writing times. The ratio of low. and high oxidation states of Ni ions in Ni-DNA represents a programmable multistate memory system with an added capacitive component, in which multistate information can be written, read, and erased. This study also indicates that the biomolecule-based self-organized nanostructure can be used as a template for nanodevice fabrication.en_US
dc.language.isoen_USen_US
dc.subjectDNAen_US
dc.subjectNi-DNAen_US
dc.subjectnanowire systemen_US
dc.subjectmultistate memory effecten_US
dc.subjectmemory resistance systemsen_US
dc.subjectnanotemplateen_US
dc.titleProgrammable Redox State of the Nickel Ion Chain in DNAen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nl404601sen_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume14en_US
dc.citation.issue2en_US
dc.citation.spage1026en_US
dc.citation.epage1031en_US
dc.contributor.department生物科技學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Biological Science and Technologyen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000331343900097-
dc.citation.woscount1-
Appears in Collections:Articles


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