標題: Solution-processable bismuth iodide nanosheets as hole transport layers for organic solar cells
作者: Boopathi, Karunakara Moorthy
Raman, Sankar
Mohanraman, Rajeshkumar
Chou, Fang-Cheng
Chen, Yang-Yuang
Lee, Chih-Hao
Chang, Feng-Chih
Chu, Chih-Wei
光電工程學系
Department of Photonics
關鍵字: Bismuth iodide nanosheet;Hole transport layer;Low temperature;Solution-processable;Organic photovoltaics
公開日期: 1-二月-2014
摘要: In this paper we demonstrate the use of low-temperature-solution-processable bismuth iodide (BiI3) nanosheets as hole transport layers in organic photovoltaics with an active layer comprising poly(3-hexylthiophene) (P3HT) mixed with a fullerene derivative. The performance of the resulting devices was comparable with that of corresponding conventionally used systems incorporating polyethylenedioxythiophene:polystyrenesulfonate (PEDOT:PSS). UV-vis spectroscopy revealed that the transparency of a BiI3 layer in the visible ( > 620 nm) and near-infrared range is greater than that of a PEDOT:PSS layer. X-ray photoemission spectroscopy of a BiI3 film revealed signals at 158.8, 164, 618.6, and 630 eV-characteristic of Bi 4f(7/2), Bi 4f(5/2), I 3d(5/2), and I 3d(3/2), respectively-that indicated a stoichiometric BiI3 film. Wet milling of BiI3 crystals resulted in the formation of nanosheets, the presence of which we confirmed using scanning electron microscopy. The resultant power conversion efficiency of the device was approximately 3.5%, with an open-circuit voltage of 0.56 V, a short-circuit current density of 10.4 mA cm(-2), and a fill factor of 60.1% under AM1.5G irradiation (100 mW cm(-2)). (C) 2013 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.solmat.2013.10.031
http://hdl.handle.net/11536/23819
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2013.10.031
期刊: SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume: 121
Issue: 
起始頁: 35
結束頁: 41
顯示於類別:期刊論文


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