標題: Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-kappa Gate Dielectric
作者: Cheng, Chun Hu
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ferroelectric;ZrHfO;transistor;sub-threshold swing
公開日期: 1-二月-2014
摘要: Power consumption is the most difficult challenge for CMOS integrated circuits. Here, we demonstrate experimentally a novel steep turn-on pMOSFET for low-voltage operation for the first time, which exhibits 5-60 mV/decade SS, wide voltage range for SS < 60 mV/decade, sturdy < 60 mV/decade SS at 85 degrees C, faster transistor turn-on at above threshold voltage, and lower off-state leakage by greater than three orders of magnitude. Such improved leakage current is crucial to decrease the OFF-state leakage current in sub-1X nm CMOS. This was achieved using ferroelectric high-kappa ZrHfO gate dielectric pMOSFET.
URI: http://dx.doi.org/10.1109/LED.2013.2291560
http://hdl.handle.net/11536/23812
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2291560
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 2
起始頁: 274
結束頁: 276
顯示於類別:期刊論文


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  1. 000331377500042.pdf