標題: Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors
作者: Tai, Ya-Hsiang
Chang, Chun-Yi
Hsieh, Chung-Lun
Yang, Yung-Hsuan
Chao, Wei-Kuang
Chen, Huan-Ean
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Thin-film transistor (TFTs);low frequency noise (LFN);amorphous indium-gallium-zinc oxide (a-IGZO);active pixel sensor (APS)
公開日期: 1-二月-2014
摘要: In this letter, a noise formula is newly proposed to calculate the low frequency noise for the three kinds of amorphous silicon, low temperature polycrystalline silicon, and amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). It is found that the noise behavior of the TFT depends on its drain current in a simple manner. Based on the analysis, the ratios of drain current to the noise level for these TFTs are compared. It reveals that a-IGZO TFT is the best candidate to be used in the active pixel sensor.
URI: http://dx.doi.org/10.1109/LED.2013.2291565
http://hdl.handle.net/11536/23809
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2291565
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 2
起始頁: 229
結束頁: 231
顯示於類別:期刊論文


文件中的檔案:

  1. 000331377500027.pdf