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dc.contributor.authorMei, YJen_US
dc.contributor.authorChang, TCen_US
dc.contributor.authorChang, SJen_US
dc.contributor.authorPan, FMen_US
dc.contributor.authorChen, MSKen_US
dc.contributor.authorTuan, Aen_US
dc.contributor.authorChou, Sen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:01:22Z-
dc.date.available2014-12-08T15:01:22Z-
dc.date.issued1997-10-31en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0040-6090(97)00482-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/237-
dc.description.abstractFluorine doped oxide (SiO2-xFx) films have been found to exhibit a low dielectric constant. However, the critical issue about SiO2-xFx is its low resistance to moisture which causes the dielectric constant of the film to increase with time. In this work, N2O and NH3 plasma post treatments are applied to as-deposited SiO2-xFx films. It has been observed that NH3 plasma post-treatments of SiO2-xFx are quite efficient at blocking moisture. The dielectric constant and stress values of the SiO2-xFx films after the N2O and NH3 plasma post-treatments are very stable. The disadvantage of N2O plasma post-treatment is that the dielectric constant of the SiO2-xFx film increases from 3.21 to 3.6 due to fluorine desorption from the SiO2-xFx network. On the other hand, NH3 plasma post-treatment is more efficient at blocking moisture and keeping the low dielectric constant unchanged due to surface nitridation of the SiO2-xFx film. (C) 1997 Elsevier Science S.A.en_US
dc.language.isoen_USen_US
dc.subjectfluorine dope oxideen_US
dc.subjectlow dielectricen_US
dc.subjectplasma post-treatmenten_US
dc.titleStabilizing dielectric constant of fluorine-doped SiO2 film by N2O and NH3 plasma post-treatmenten_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0040-6090(97)00482-3en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume308en_US
dc.citation.issueen_US
dc.citation.spage501en_US
dc.citation.epage506en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000071553400092-
Appears in Collections:Conferences Paper


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