標題: Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
作者: Huang, Chun-Yang
Huang, Chung-Yu
Tsai, Tsung-Ling
Lin, Chun-An
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 10-Feb-2014
摘要: In this Letter, the mechanism of double forming process phenomenon revealing in ZrO2/HfO2 bilayer resistive random access memory structure is investigated. This phenomenon caused by the formation of TiON interfacial layer can be well explained by using the energy band diagram. The TiON interfacial layer will be a tunneling barrier during the first forming process when a negative voltage applied on the device, while it will breakdown when applying a positive voltage. Besides, due to the double forming process, an asymmetric conductive filament with narrower size at ZrO2/HfO2 interface is formed in the device. The point for formation and rupture of the conductive filament can be confined at the ZrO2/HfO2 interface, and it will suppress the consumption of oxygen ions during endurance test. Therefore, high speed (40 ns) and large endurance (10(7) cycles) characteristics are achieved in this device structure. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4864396
http://hdl.handle.net/11536/23787
ISSN: 0003-6951
DOI: 10.1063/1.4864396
期刊: APPLIED PHYSICS LETTERS
Volume: 104
Issue: 6
結束頁: 
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