標題: GaN-Based Light-Emitting-Diode With a p-InGaN Layer
作者: Chen, P. H.
Kuo, Cheng-Huang
Lai, W. C.
Chen, Yu An
Chang, L. C.
Chang, S. J.
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: Efficiency droop;light emitting diode (LED);p-InGaN
公開日期: 1-三月-2014
摘要: GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.
URI: http://dx.doi.org/10.1109/JDT.2013.2293767
http://hdl.handle.net/11536/23761
ISSN: 1551-319X
DOI: 10.1109/JDT.2013.2293767
期刊: JOURNAL OF DISPLAY TECHNOLOGY
Volume: 10
Issue: 3
起始頁: 204
結束頁: 207
顯示於類別:期刊論文


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