|標題:||GaN-Based Light-Emitting-Diode With a p-InGaN Layer|
|作者:||Chen, P. H.|
Lai, W. C.
Chen, Yu An
Chang, L. C.
Chang, S. J.
Institute of Lighting and Energy Photonics
|關鍵字:||Efficiency droop;light emitting diode (LED);p-InGaN|
|摘要:||GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.|
|期刊:||JOURNAL OF DISPLAY TECHNOLOGY|
|Appears in Collections:||Articles|
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