標題: Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gate
作者: Zhu, SY
Li, R
Lee, SJ
Li, MF
Du, AY
Singh, J
Zhu, CX
Chin, A
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: germanium;high-kappa;metal gate;MOSFET;Schottky
公開日期: 1-Feb-2005
摘要: Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and self-aligned NiGe S/D. The drain drivability is improved over the silicon counterpart with PtSi S/D by as much as similar to5 times due to the lower hole Schottky barrier of the NiGe-Ge contact than that of PtSi-Si contact as well as the higher mobility of Ge channel than that of Si.
URI: http://dx.doi.org/10.1109/LED.2004.841462
http://hdl.handle.net/11536/23688
ISSN: 0741-3106
DOI: 10.1109/LED.2004.841462
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 2
起始頁: 81
結束頁: 83
Appears in Collections:Articles


Files in This Item:

  1. 000226479100011.pdf