標題: Recombination dynamics and carrier lifetimes in highly mismatched ZnTeO alloys
作者: Lin, Yan-Cheng
Tasi, Ming-Jui
Chou, Wu-Ching
Chang, Wen-Hao
Chen, Wei-Kuo
Tanaka, Tooru
Guo, Qixin
Nishio, Mitsuhiro
電子物理學系
Department of Electrophysics
公開日期: 23-十二月-2013
摘要: This study investigates the recombination dynamics in highly mismatched ZnTeO alloys using time-resolved photoluminescence (PL) spectroscopy. The large PL energy redshift with increasing O content and the disappearance of the ZnTe emission verify the O-induced conduction band anticrossing effect. The incorporation of O generates electron localization below the E_ conduction subband tail, which provide additional optical transitions and cause complex recombination mechanisms. Photoexcited free electrons in both the E+ and the E- conduction subbands favor rapid relaxation to low energy states. Additionally, temperature-independent long carrier lifetimes (>130.0 ns) that are induced by localized electrons increase with O concentration. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4858968
http://hdl.handle.net/11536/23646
ISSN: 0003-6951
DOI: 10.1063/1.4858968
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 26
結束頁: 
顯示於類別:期刊論文


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