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dc.contributor.authorHuang, Jing-Kaien_US
dc.contributor.authorPu, Jiangen_US
dc.contributor.authorHsu, Chang-Lungen_US
dc.contributor.authorChiu, Ming-Huien_US
dc.contributor.authorJuang, Zhen-Yuen_US
dc.contributor.authorChang, Yung-Huangen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorIwasa, Yoshihiroen_US
dc.contributor.authorTakenobu, Taishien_US
dc.contributor.authorLi, Lain-Jongen_US
dc.date.accessioned2014-12-08T15:34:35Z-
dc.date.available2014-12-08T15:34:35Z-
dc.date.issued2014-01-01en_US
dc.identifier.issn1936-0851en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nn405719xen_US
dc.identifier.urihttp://hdl.handle.net/11536/23612-
dc.description.abstractThe monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics, and optoelectronic devices. Recent reports have demonstrated the growth of large-size two-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of a transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large size WSe2 monolayer flakes or thin films can be successfully grown. The top-gated field-effect transistors based on WSe2 monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm(2)/Vs, respectively. These films can be transferred onto arbitrary substrates, which may inspire research efforts to explore their properties and applications. The resistor-loaded inverter based on a WSe2 film, with a gain of similar to 13, further demonstrates its applicability for logic-circuit integrations.en_US
dc.language.isoen_USen_US
dc.subjecttransition metal dichalcogenidesen_US
dc.subjecttungsten diselenidesen_US
dc.subjectlayered materialsen_US
dc.subjecttransistorsen_US
dc.subjectinvertersen_US
dc.subjecttwo-dimensional materialsen_US
dc.titleLarge-Area Synthesis of Highly Crystalline WSe2 Mono layers and Device Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nn405719xen_US
dc.identifier.journalACS NANOen_US
dc.citation.volume8en_US
dc.citation.issue1en_US
dc.citation.spage923en_US
dc.citation.epage930en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000330542900096-
dc.citation.woscount44-
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