標題: Large-Area Synthesis of Highly Crystalline WSe2 Mono layers and Device Applications
作者: Huang, Jing-Kai
Pu, Jiang
Hsu, Chang-Lung
Chiu, Ming-Hui
Juang, Zhen-Yu
Chang, Yung-Huang
Chang, Wen-Hao
Iwasa, Yoshihiro
Takenobu, Taishi
Li, Lain-Jong
電子物理學系
Department of Electrophysics
關鍵字: transition metal dichalcogenides;tungsten diselenides;layered materials;transistors;inverters;two-dimensional materials
公開日期: 1-Jan-2014
摘要: The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics, and optoelectronic devices. Recent reports have demonstrated the growth of large-size two-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of a transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large size WSe2 monolayer flakes or thin films can be successfully grown. The top-gated field-effect transistors based on WSe2 monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm(2)/Vs, respectively. These films can be transferred onto arbitrary substrates, which may inspire research efforts to explore their properties and applications. The resistor-loaded inverter based on a WSe2 film, with a gain of similar to 13, further demonstrates its applicability for logic-circuit integrations.
URI: http://dx.doi.org/10.1021/nn405719x
http://hdl.handle.net/11536/23612
ISSN: 1936-0851
DOI: 10.1021/nn405719x
期刊: ACS NANO
Volume: 8
Issue: 1
起始頁: 923
結束頁: 930
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