Title: Effect of TCO/mu c-Si:H Interface Modification on Hydrogenated Microcrystalline Silicon Thin-Film Solar Cells
Authors: Liang, Shin-Wei
Hsu, Cheng-Hang
Tsai, Chuang-Chuang
Department of Photonics
Issue Date: 2013
Abstract: The effects of H-2 plasma exposure on optical, electrical, and structural properties of fluorine-doped tin oxide (FTO) and AZO/FTO substrates have been investigated. With increasing the time of H-2-plasma exposure, the hydrogen radical and ions penetrated through the FTO surface to form more suboxides such as SnO and metallic Sn, which was confirmed by the XPS analysis. The Sn reduction on the FTO surface can be effectively eliminated by capping the FTO with a very thin layer of sputtered aluminum-doped zinc oxide (AZO), as confirmed by the XPS analysis. By using the AZO/FTO as front TCO with the subsequent annealing, the p-i-n mu c-Si:H cell exhibited a significantly enhanced JSC from 15.97 to 19.40 mA/cm(2) and an increased conversion efficiency from 5.69% to 7.09%. This significant enhancement was ascribed to the effective elimination of the Sn reduction on the FTO surface by the thin AZO layer during the Si-based thin-film deposition with hydrogen-rich plasma exposure. Moreover, the subsequent annealing of the sputtered AZO could lead to less defects as well as a better interface of AZO/FTO.
URI: http://hdl.handle.net/11536/23491
ISSN: 1110-662X
DOI: 10.1155/2013/756084
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