標題: Comparison of H-2 and NH3 Treatments for Copper Interconnects
作者: Chang, Yu-Min
Leu, Jihperng
Lin, Bing-Hong
Wang, Ying-Lung
Cheng, Yi-Lung
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2013
摘要: The surface state, electrical, and reliability characteristics of copper (Cu) interconnects after ammonia (NH3) or hydrogen (H-2) plasma treatment were investigated in this study. The experimental results show that H-2 plasma treatment has excellent Cu oxide removal efficiency, less impact on the formation of Cu hillocks, and less damage on low-dielectric constant (low-k) dielectrics in comparison to NH3 plasma treatment. However, H-2 plasma treatment results in a higher leakage current between the Cu lines and shorter electromigration (EM) failure time due to a weaker adhesion strength at the Cu film interface. On the other hand, NH3 plasma treatment without the sufficient treatment time would lead to an increased probability of delamination at the Cu/barrier layer interface since the Cu oxide layer can not be completely removed. As a result, extending NH3 plasma treatment time can efficiently reduce the adhesion failure and enlarge EM resistance as well.
URI: http://hdl.handle.net/11536/23485
http://dx.doi.org/10.1155/2013/825195
ISSN: 1687-8434
DOI: 10.1155/2013/825195
期刊: ADVANCES IN MATERIALS SCIENCE AND ENGINEERING
顯示於類別:期刊論文


文件中的檔案:

  1. 000328980900001.pdf