Title: Investigation and Comparison of the GaN-Based Light-Emitting Diodes Grown on High Aspect Ratio Nano-Cone and General Micro-Cone Patterned Sapphire Substrate
Authors: Huang, Jhih-Kai
Lin, Da-Wei
Shih, Min-Hsiung
Lee, Kang-Yuan
Chen, Jyun-Rong
Huang, Hung-Weng
Kuo, Shou-Yi
Lin, Chung-Hsiang
Lee, Po-Tsung
Chi, Gou-Chung
Kuo, Hao-Chung
Department of Photonics
Keywords: GaN;light-emitting diodes (LEDs);nano-imprint lithography (NIL);nano-patterned sapphire substrate (NPSS)
Issue Date: 1-Dec-2013
Abstract: In this paper, we demonstrated the high performance GaN-based LEDs by using a high aspect ratio cone-shape nano-patterned sapphire substrate (HAR-NPSS). We utilized nano-imprint lithography (NIL) and dry-etching system to fabricate a high depth HAR-NPSS. The micro-scale patterned sapphire substrate (PSS) was also used for comparison. A great enhancement of light output was observed when GaN-based LEDs were grown on a HAR-NPSS or a PSS. The light output power of LEDs with a HAR-NPSS and LEDs with a PSS were enhanced of 49 and 38% compared to LEDs with a unpatterned sapphire substrate. The high output power of the LED with a HAR-NPSS indicated that the technology of NAR-NPSS not only can improve the crystalline quality of GaN-based LEDs but also a promising development to a NPSS.
URI: http://dx.doi.org/10.1109/JDT.2013.2270276
ISSN: 1551-319X
DOI: 10.1109/JDT.2013.2270276
Volume: 9
Issue: 12
Begin Page: 947
End Page: 952
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