標題: Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors
作者: Zhan, Runze
Dong, Chengyuan
Liu, Po-Tsun
Shieh, Han-Ping D.
光電工程學系
Department of Photonics
公開日期: 1-十二月-2013
摘要: The electrical stability of amorphous InGaZnO (a-IGZO) TFTs with three different channel layers was investigated. Compared with the single channel layer, the a-IGZO TFT with double stacked channel layer showed the lowest threshold voltage shift with slightly change in field effect mobility and sub-threshold swing under positive and negative gate bias stress tests. Moreover, sputtered SiNx thin film was served as passivation layer where the Vth shift in bias stress effect evidently became less. It was found that the passivated a-IGZO TFT with double stacked channel layer still exhibited the best stability. The results prove that the stability of a-IGZO TFTs can be effectively improved by using double stacked channel layer and passivation layer. (C) 2013 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2013.05.007
http://hdl.handle.net/11536/23436
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2013.05.007
期刊: MICROELECTRONICS RELIABILITY
Volume: 53
Issue: 12
起始頁: 1879
結束頁: 1885
顯示於類別:期刊論文


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