|標題:||Evolution of the conductivity type in germania by varying the stoichiometry|
|作者:||Islamov, D. R.|
Gritsenko, V. A.
Cheng, C. H.
National Chiao Tung University
|摘要:||Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity. (C) 2013 AIP Publishing LLC.|
|期刊:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
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