Title: Evolution of the conductivity type in germania by varying the stoichiometry
Authors: Islamov, D. R.
Gritsenko, V. A.
Cheng, C. H.
Chin, A.
National Chiao Tung University
Issue Date: 2-Dec-2013
Abstract: Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4838297
ISSN: 0003-6951
DOI: 10.1063/1.4838297
Volume: 103
Issue: 23
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