標題: Evolution of the conductivity type in germania by varying the stoichiometry
作者: Islamov, D. R.
Gritsenko, V. A.
Cheng, C. H.
Chin, A.
交大名義發表
National Chiao Tung University
公開日期: 2-十二月-2013
摘要: Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4838297
http://hdl.handle.net/11536/23420
ISSN: 0003-6951
DOI: 10.1063/1.4838297
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 23
結束頁: 
顯示於類別:期刊論文


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  1. 000328634900065.pdf