標題: EFFECTS OF SIH4, GEH4, AND B2H6 ON THE NUCLEATION AND DEPOSITION OF POLYCRYSTALLINE SI1-XGEX FILMS
作者: LIN, HC
CHANG, CY
CHEN, WH
TSAI, WC
CHANG, TC
JUNG, TG
LIN, HY
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-九月-1994
摘要: In this study, the effects of different reactants, namely, SiH4, GeH4 and B2H6, on the nucleation and deposition of polycrystalline silicon-germanium (poly-Si1-xGe(x)) films on oxide surface in an ultrahigh vacuum chemical vapor deposition reactor were explored. The results show that the addition of GeH4 tends to retard the nucleation process of poly films while B2H6 is preferential for adsorbing on the oxide surface. These effects lead to different incubation duration depending on the kind of reactants used. On the deposition of poly-Si1-xGe(x) films, it is observed that the Ge incorporation is only slightly related to the substrate type, but the deposition mode of poly-Si1-xGe(x) films is much different from that of epitaxial growth on Si(100). The incorporation of Ge atoms also overcomes the anomalous doping effect encountered in heavily boron-doped poly-Si films and allows extremely low resistivity (below 2 mOMEGA-cm) poly films to be obtained at low temperatures (less-than-or-equal-to550-degrees-C).
URI: http://hdl.handle.net/11536/2342
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 141
Issue: 9
起始頁: 2559
結束頁: 2563
顯示於類別:期刊論文


文件中的檔案:

  1. A1994PG28600066.pdf