Title: Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
Authors: Chang, Kuan-
Huang, Jen-wei
Chang, Ting-Chang
Tsai, Tsung-Ming
Chen, Kai-Huang
Young, Tai-Fa
Chen, Jung-Hui
Zhang, Rui
Lou, Jen-Chung
Huang, Syuan-Yong
Pan, Yin-Chih
Huang, Hui-Chun
Syu, Yong-En
Gan, Der-Shin
Bao, Ding-Hua
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
Keywords: RRAM;Porous SiO2;Space charge limited current;Zr
Issue Date: 11-Dec-2013
Abstract: To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model.
URI: http://dx.doi.org/10.1186/1556-276X-8-523
ISSN: 1556-276X
DOI: 10.1186/1556-276X-8-523
Volume: 8
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