|Title:||Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|Keywords:||RRAM;Porous SiO2;Space charge limited current;Zr|
|Abstract:||To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was investigated and found in this study. The resistive switching properties of the low-resistance state (LRS) and high-resistance state (HRS) in resistive random access memory (RRAM) devices for the single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films were analyzed and discussed. In addition, the original space charge limited current (SCLC) conduction mechanism in LRS and HRS of the RRAM devices using bilayer Zr:SiO2/porous SiO2 thin films was found. Finally, a space electric field concentrated effect in the bilayer Zr:SiO2/porous SiO2 RRAM devices was also explained and verified by the COMSOL Multiphysics simulation model.|
|Journal:||NANOSCALE RESEARCH LETTERS|
|Appears in Collections:||Articles|
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