|標題:||Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure|
Chou, K. I.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||Resistive random access memory (RRAM);SiO2;TiO2;Current distribution|
|摘要:||In this study, we report a resistive random access memory (RRAM) using trilayer SiOx/a-Si/TiOy film structure. The low switching energy of <10 pJ, highly uniform current distribution (<13% variation), fast 50-ns speed and stable cycling endurance for 10(6) cycles are simultaneously achieved in this RRAM device. Such good performance can be ascribed to the use of interface-engineered dielectric stack with 1D1R-like structure. The SiOx tunnel barrier in contact with top Ni electrode to form diode-like rectifying element not only lowers self-compliance switching currents, but also improves cycling endurance, which is favorable for the application of high-density 3D memory. (C) 2013 Elsevier B. V. All rights reserved.|
|期刊:||CURRENT APPLIED PHYSICS|
|Appears in Collections:||Articles|
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