標題: Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure
作者: Cheng, Chun-Hu
Chou, K. I.
Zheng, Zhi-Wei
Hsu, Hsiao-Hsuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Resistive random access memory (RRAM);SiO2;TiO2;Current distribution
公開日期: 1-一月-2014
摘要: In this study, we report a resistive random access memory (RRAM) using trilayer SiOx/a-Si/TiOy film structure. The low switching energy of <10 pJ, highly uniform current distribution (<13% variation), fast 50-ns speed and stable cycling endurance for 10(6) cycles are simultaneously achieved in this RRAM device. Such good performance can be ascribed to the use of interface-engineered dielectric stack with 1D1R-like structure. The SiOx tunnel barrier in contact with top Ni electrode to form diode-like rectifying element not only lowers self-compliance switching currents, but also improves cycling endurance, which is favorable for the application of high-density 3D memory. (C) 2013 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.cap.2013.10.019
http://hdl.handle.net/11536/23399
ISSN: 1567-1739
DOI: 10.1016/j.cap.2013.10.019
期刊: CURRENT APPLIED PHYSICS
Volume: 14
Issue: 1
起始頁: 139
結束頁: 143
顯示於類別:期刊論文


文件中的檔案:

  1. 000328477900023.pdf