標題: Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric
作者: Cheng, Chun-Hu
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ferroelectric;ZrHfO;1T;DRAM;FeMOS;MOSFET;memory
公開日期: 1-一月-2014
摘要: The power consumption of capacitor leakage current, increase of the capacitor aspect ratio, and lack of higher dielectric constant (kappa) material are the difficult challenges to downscaling dynamic random access memory (DRAM). This letter reports a new one-transistor ferroelectric-MOSFET (1T FeMOS) device that displays DRAM functions of a 5 ns switching time, 10(12) on/off endurance cycles, and 30 times on/off retention windows at 5 s and 85 degrees C. A simple 1T process and a considerably low OFF-state leakage of 3 x 10(-12) A/mu m were achieved. This novel device was achieved by applying ferroelectric ZrHfO gate dielectric to a p-MOSFET, which is fully compatible with existing high-kappa CMOS processing.
URI: http://dx.doi.org/10.1109/LED.2013.2290117
http://hdl.handle.net/11536/23386
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2290117
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 1
起始頁: 138
結束頁: 140
顯示於類別:期刊論文


文件中的檔案:

  1. 000329061300046.pdf