標題: High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO
作者: Hsu, Hsiao-Hsuan
Chang, Chun-Yen
Cheng, Chun-Hu
Chiou, Shan-Haw
Huang, Chiung-Hui
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: TiO2;indium-gallium-zinc oxide (IGZO);thin-film transistor (TFT);mobility;gettering
公開日期: 1-Jan-2014
摘要: We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of <2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 x 10(-11) A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm(2)/Vs, which may create the potential application for high resolution display.
URI: http://dx.doi.org/10.1109/LED.2013.2290707
http://hdl.handle.net/11536/23385
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2290707
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 1
起始頁: 87
結束頁: 89
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