標題: Body-Tied Germanium Tri-Gate Junctionless PMOSFET With In-Situ Boron Doped Channel
作者: Chen, Che-Wei
Chung, Cheng-Ting
Tzeng, Ju-Yuan
Chang, Pang-Sheng
Luo, Guang-Li
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Junctionless;tri-gate;germanium;body-tied;in-situ heavily doped
公開日期: 1-Jan-2014
摘要: In this letter, we demonstrate body-tied Ge tri-gate junctionless (JL) p-channel MOSFETs directly on Si. Our tri-gate JL-PFET exhibits higher current than the conventional inversion-mode transistor through in-situ heavily doped technique and trimming down Ge fin width. We show that the JL-PFET with tri-gate structure has excellent I-ON/I-OFF ratio and good short channel effect control on the channel potential. The current ratio is of similar to 6 x 10(3) (I-D) at V-DS = -0.1 V, V-GS = -3, and 0 V. The relatively low OFF-current is of 6 nA/ mu m at V-DS = -0.1 V and V-GS = 0 V. The subthreshold swing of 203 mV/decade and drain induced barrier lowering of 220 mV/V are reported at L-G = 120 nm.
URI: http://dx.doi.org/10.1109/LED.2013.2291394
http://hdl.handle.net/11536/23384
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2291394
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 1
起始頁: 12
結束頁: 14
Appears in Collections:Articles


Files in This Item:

  1. 000329061300004.pdf