Title: Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation
Authors: Chen, Che-Wei
Tzeng, Ju-Yuan
Chung, Cheng-Ting
Chien, Hung-Pin
Chien, Chao-Hsin
Luo, Guang-Li
Wang, Pei-Yu
Tsui, Bing-Yue
Department of Electronics Engineering and Institute of Electronics
Keywords: Shottky barrier height;dopant segregation;NiGe;nMOSFET
Issue Date: 1-Jan-2014
Abstract: In this letter, we present a high performance Ge n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a NiGe Schottky junction source/drain fabricated using phosphorus dopant segregation. Phosphorus atoms were implanted into NiGe and then driven toward the NiGe/p-Ge interface to depin the Fermi level and form a Schottky junction. A high effective barrier height (Phi(Bp)) of 0.57 eV, resulting in a high junction current ratio of >10(4) at the applied voltage vertical bar V-a vertical bar = +/- 1 V. The nMOSFET exhibited a high I-ON/I-OFF ratio of similar to 8 x 10(3) (I-D), similar to 10(5) (I-S), and a subthreshold swing of 138 mV/decade. The nMOSFET developed in this letter exhibited greater transconductance and a drain leakage current that is more than two orders of magnitude lower compared with nMOSFETs with the conventional n(+)/p junction.
URI: http://dx.doi.org/10.1109/LED.2013.2291774
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2291774
Volume: 35
Issue: 1
Begin Page: 6
End Page: 8
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