標題: Enhancing the Performance of Germanium Channel nMOSFET Using Phosphorus Dopant Segregation
作者: Chen, Che-Wei
Tzeng, Ju-Yuan
Chung, Cheng-Ting
Chien, Hung-Pin
Chien, Chao-Hsin
Luo, Guang-Li
Wang, Pei-Yu
Tsui, Bing-Yue
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Shottky barrier height;dopant segregation;NiGe;nMOSFET
公開日期: 1-一月-2014
摘要: In this letter, we present a high performance Ge n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a NiGe Schottky junction source/drain fabricated using phosphorus dopant segregation. Phosphorus atoms were implanted into NiGe and then driven toward the NiGe/p-Ge interface to depin the Fermi level and form a Schottky junction. A high effective barrier height (Phi(Bp)) of 0.57 eV, resulting in a high junction current ratio of >10(4) at the applied voltage vertical bar V-a vertical bar = +/- 1 V. The nMOSFET exhibited a high I-ON/I-OFF ratio of similar to 8 x 10(3) (I-D), similar to 10(5) (I-S), and a subthreshold swing of 138 mV/decade. The nMOSFET developed in this letter exhibited greater transconductance and a drain leakage current that is more than two orders of magnitude lower compared with nMOSFETs with the conventional n(+)/p junction.
URI: http://dx.doi.org/10.1109/LED.2013.2291774
http://hdl.handle.net/11536/23383
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2291774
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 1
起始頁: 6
結束頁: 8
顯示於類別:期刊論文


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  1. 000329061300002.pdf