Title: Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices
Authors: Zhong, Chia-Wen
Tzeng, Wen-Hsien
Liu, Kou-Chen
Lin, Horng-Chih
Chang, Kow-Ming
Chan, Yi-Chun
Kuo, Chun-Chih
Chen, Pang-Shiu
Lee, Heng-Yuan
Chen, Frederick
Tsai, Ming-Jinn
Department of Electronics Engineering and Institute of Electronics
Keywords: Indium tin oxide (ITO);Transparent-RRAM (TRRAM);Oxygen content
Issue Date: 1-Sep-2013
Abstract: In this study, the influence of indium tin oxide (ITO) top electrodes with different oxygen contents on the resistive switching characteristics of HfOx/TiN capacitor structure is investigated. Switching parameters, including set and reset voltage values, and high and low resistance values are highly related to the properties of ITO thin films. Higher resistance values in both states can be obtained when ITO thin films with higher oxygen contents are used as top electrodes; such values are accompanied by larger set voltages and fluctuating transient currents during the reset process. Based on the proposed filament model, we suggest that the switching mechanism of HfOx/TiN structure is attributed to the formation and rupture of conducting filamentary paths near the anodic side, which is highly correlated with the properties of the top electrode. The top electrode must be well determined to obtain reliable switching properties. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2012.07.039
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2012.07.039
Volume: 231
Begin Page: 563
End Page: 566
Appears in Collections:Articles

Files in This Item:

  1. 000328094200118.pdf