標題: The influence of abrasive particle size in copper chemical mechanical planarization
作者: Wei, Kuo-Hsiu
Wang, Yu-Sheng
Liu, Chuan-Pu
Chen, Kei-Wei
Wang, Ying-Lang
Cheng, Yi-Lung
光電學院
College of Photonics
關鍵字: Abrasive;Particle size distribution;PSD;Glycine;Copper;CMP
公開日期: 1-九月-2013
摘要: There are many kinds of commercial slurries used in Cu CMP. Major components include an oxidizing agent, complexing agents, inhibitors, and abrasives. We analyze the abrasive particle size by TEM and light scattering. Cu CMP polishing mechanism is also discussed under different particle size distribution. The complexing agent transportation will be the rate determining step when a small abrasive is insufficient, but the copper hydroxide removal rate will determine the overall polishing rate when the amount of smaller particles is enough. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2012.04.004
http://hdl.handle.net/11536/23336
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2012.04.004
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 231
Issue: 
起始頁: 543
結束頁: 545
顯示於類別:期刊論文


文件中的檔案:

  1. 000328094200114.pdf