標題: Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors
作者: Chen, Yu-Chun
Chang, Ting-Chang
Li, Hung-Wei
Chung, Wan-Fang
Chen, Shih-Cheng
Wu, Chang-Pei
Chen, Yi-Hsien
Tai, Ya-Hsiang
Tseng, Tseung-Yuen
Yeh(Huang), Fon-Shan
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: Indium gallium zinc oxide;Thin film transistors;Hysteresis
公開日期: 1-Sep-2013
摘要: This study investigates environmentally dependent electrical performance as a function of hysteresis phenomena for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). Because ambient gas has a great influence on the electrical characteristics of zinc oxide-based TFTs during electrical measurements, the hysteresis for current-voltage and capacitance-voltage measurements are employed in different ambient gases (ambient air, vacuum, oxygen ambient and moisture ambient) to study this issue. Although the hysteresis phenomenon has been explained by the charge trapping and de-trapping model, in order to obtain stable electrical characteristics it is necessary to clarify the original principal mechanism leading to threshold voltage instability under gate bias operations in different environments. Also, the relationship between de-trapping rate and electrical hysteresis is investigated by prolonging the integration time of the semiconductor parameter analyzer. This study may be of importance in explaining the dynamic relationship between the TFT electrical characteristics and ambient gas, as well as providing a better understanding of the environment-dependent hysteresis phenomenon of the IGZO TFTs. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2012.02.057
http://hdl.handle.net/11536/23335
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2012.02.057
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 231
Issue: 
起始頁: 531
結束頁: 534
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