Title: A Novel Pixel Design for AM-OLED Displays Using Nanocrystalline Silicon TFTs
Authors: Lin, Chen-Wei
Chao, Mango C.-T.
Huang, Yen-Shih
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Active Matrix Organic Light Emitting Diode (AM-OLED);coupling effect;microcrystalline thin-film transistor (TFT);nanocrystalline TFT
Issue Date: 1-Jun-2011
Abstract: This paper presents a novel pixel design for active matrix organic light emitting diode (AM-OLED) displays using nanocrystalline silicon thin-film transistors (TFTs). The proposed pixel design can effectively reduce the variation of its stored display data caused by the leakage current of nanocrystalline silicon TFTs, which can in turn increase the contrast resolution of AM-OLED displays. With a proper setting of its capacitors, the proposed pixel design can achieve a 5.55 x reduction on its display-data variation while requiring only a 1.15 x write time when compared to the typical pixel design. The aperture ratio resulting from the layout of the proposed pixel design can also be maintained above 40%, which satisfies the specification of most AM-OLED displays. A series of simulations as well as measurement results are provided to validate the effectiveness of the proposed pixel design.
URI: http://dx.doi.org/10.1109/TVLSI.2010.2042735
http://hdl.handle.net/11536/23334
ISSN: 1063-8210
DOI: 10.1109/TVLSI.2010.2042735
Journal: IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
Volume: 19
Issue: 6
Begin Page: 939
End Page: 952
Appears in Collections:Articles


Files in This Item:

  1. 000290998700002.pdf