標題: Zinc oxide thin-film transistors fabricated via low-temperature hydrothermal method
作者: Wang, Jyh-Liang
Yang, Po-Yu
Juang, Miin-Horng
Hsieh, Tsang-Yen
Hwang, Chuan-Chou
Juan, Chuan-Ping
Lee, I-Che
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Zinc oxide (ZnO);Hydrothermal growth (HTG);Thin-film transistors (TFTs);Active-layer;Lateral growth
公開日期: 1-九月-2013
摘要: Transparent high-performance ZnO TFTs have been fabricated via low-temperature hydrothermal method. The dip of H3PO4 solution prior to the hydrothermal process can form the under-cut AZO seed layer and benefit for the control of ZnO growth. While the use of under-cut AZO seed layer with proper design of channel length, the lateral ZnO growth can be artificially controlled in the desired location to make a continuous active-layer and nearly single one vertical grain boundary cross to the current flow in the channel region. ZnO TFTs indicate the behavior of n-channel enhancement-mode devices. The optimum design of channel length (i.e. L=10 mu m) can provide enough space for the lateral growth of large ZnO grains with less channel defects and bring about the advanced device characteristics (i.e. the positive threshold voltage of 3.0 V, mobility of 9.03 cm(2)/V.s, on/off current ratio >10(6), gate leakage of <1 nA with less fluctuation, and extremely high drain current >500 mu A). (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2012.02.029
http://hdl.handle.net/11536/23331
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2012.02.029
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 231
Issue: 
起始頁: 428
結束頁: 432
顯示於類別:期刊論文


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