標題: Influences of SiOx layer thickness on the characteristics of In-Zn-O/SiOx/n-Si hetero-junction structure solar cells
作者: Fang, Hau-Wei
Hsieh, Tsung-Eong
Juang, Jenh-Yih
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: Indium zinc oxide;Pulsed laser deposition;Hetero-junction structured solar cells
公開日期: 1-九月-2013
摘要: Indium zinc oxide (IZO) film was directly deposited on an n-type Si substrate by pulsed laser deposition (PLD) to form the IZO/SiOx/n-Si hetero-junction solar cell. Analytical results indicated that the thickness and quality of the thermal SiOx layer plays a prominent role in determining the conversion efficiency of the solar cell. The sample containing an about 1.78-nm-thick SiOx layer exhibits an open-circuit voltage of 035 V, a short-circuit current density of 28.6 mA/cm(2), a fill factor of 34.3%, and an overall conversion efficiency of 3.4% under AM1.5 condition. The effects of the SiOx layer thickness and the associated interface states on the carrier transport are discussed. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2012.07.067
http://hdl.handle.net/11536/23324
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2012.07.067
期刊: SURFACE & COATINGS TECHNOLOGY
Volume: 231
Issue: 
起始頁: 214
結束頁: 218
顯示於類別:期刊論文


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  1. 000328094200047.pdf