Title: Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer
Authors: Huang, Sheng-Yao
Chang, Ting-Chang
Chen, Min-Chen
Chen, Te-Chih
Jian, Fu-Yen
Chen, Yu-Chun
Huang, Hui-Chun
Gan, Der-Shin
Department of Electronics Engineering and Institute of Electronics
Keywords: Thin film transistors;Indium gallium zinc oxide;Passivation;Bias stress
Issue Date: 1-Sep-2013
Abstract: This work presents the light-color-dependent negative bias stress (NBIS) effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with Al2O3 passivation layer. The colors of incident photon are varied from red to blue, that incident photon energies are all lower than the optical band gap of IGZO (3.2 eV). The experimental results show that the Al2O3 passivated devices present stable electrical behaviors under different incident lights (Delta V-T<0.1 V of dark and red, Delta V-T<1 V of green, and Delta V-T<4 V of blue), whereas the unpassivation devices exhibit observable negative shifts during NBIS (Delta V-T<1 V of dark and red, Delta V-T>8 V of green, and Delta V-T>15 V of blue). The degradation mechanism of the negative bias stress under illumination of a-IGZO TFTs is dominated by the photo-generated hole trapping at the gate insulator and/or interface between insulator and channel. In this result, the Al2O3 passivation layer can effectively passivate the defect in the a-IGZO film, reducing electron hole pair generated during the illumination processed. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.surfcoat.2011.12.047
ISSN: 0257-8972
DOI: 10.1016/j.surfcoat.2011.12.047
Volume: 231
Begin Page: 117
End Page: 121
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