Title: Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate
Authors: Hsu, Hsiao-Hsuan
Chang, Chun-Yen
Cheng, Chun-Hu
Yu, Shu-Hung
Su, Ching-Yuan
Su, Chung-Yen
Department of Electronics Engineering and Institute of Electronics
Keywords: InGaZnO (IGZO);Thin-film transistor (TFT);TiO2;GeO2
Issue Date: 1-Nov-2013
Abstract: This study demonstrates the feasibility of producing an InGaZnO thin-film transistor (TFT) using a high-kappa germanium oxide (GeO2)/titanium oxide (TiO2)/GeO2 gate stack on a flexible polycarbonate substrate. The flexible TFT exhibited a small sub-threshold swing of 0.132 V/decade, an acceptable field effect mobility of 8 cm(2)/(V s), and a robust I-on/I-off ratio of 2.4 x 10(7). The improved device performance can be attributed to the combined effect of high-kappa TiO2 and the large band gap of GeO2 that exhibits a tendency to remain in a Ge4+ oxidation state at room temperature. (C) 2013 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2013.08.009
ISSN: 0038-1101
DOI: 10.1016/j.sse.2013.08.009
Volume: 89
Begin Page: 194
End Page: 197
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