Title: Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2
Authors: Luo, Wun-Cheng
Hou, Tuo-Hung
Lin, Kuan-Liang
Lee, Yao-Jen
Lei, Tan-Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: RRAM;Filament;Multi-level-cell;Resistive switching
Issue Date: 1-Nov-2013
Abstract: In contrast to the irreversible transition of resistive switching induced by oxygen-vacancy filaments (VF) and metal filaments (MF) reported in the literature, this study reports coexistence and completely reversible transition of VF- and MF-induced resistive switching in a Ni/HfO2/SiOx/P+-Si device with three distinct and stable resistance states. In a dual filament model proposed, VF and MF may coexist at the same percolation path, and the formation and rupture proceed in a two-step fashion by choosing appropriate SET/RESET conditions. Exploiting the dependence of different filament compositions on resistive switching may enable new design space for future multi-level-cell resistive-switching memory. (C) 2013 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2013.08.005
http://hdl.handle.net/11536/23293
ISSN: 0038-1101
DOI: 10.1016/j.sse.2013.08.005
Journal: SOLID-STATE ELECTRONICS
Volume: 89
Issue: 
Begin Page: 167
End Page: 170
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