Title: Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability
Authors: Chiou, Uio-Pu
Shieh, Jia-Min
Yang, Chih-Chao
Huang, Wen-Hsien
Kao, Yo-Tsung
Pan, Fu-Ming
Department of Materials Science and Engineering
Department of Photonics
Issue Date: 11-Nov-2013
Abstract: We fabricated nano-crystalline Si (nc-Si: H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (mu(FE)) and adjustable threshold voltages (V-th). The nc-Si: H channel and source/drain (S/D) of the multilayered TFT were deposited at 375 degrees C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high mu(FE) of 370 cm(2) /V-s, a steep subthreshold slope of 90 mV/decade, and a low V-th of -0.64 V. When biased with the double-gate driving mode, the device shows a tunable V-th value extending from -1V up to 2.7 V. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4832072
ISSN: 0003-6951
DOI: 10.1063/1.4832072
Volume: 103
Issue: 20
End Page: 
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