|標題:||High performance of graphene oxide-doped silicon oxide-based resistance random access memory|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||High performance;Graphene oxide;RRAM;Hopping conduction|
|摘要:||In this letter, a double active layer (Zr:SiO (x) /C:SiO (x) ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO (x) layer. Compared with single Zr:SiO (x) layer structure, Zr:SiO (x) /C:SiO (x) structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.|
|期刊:||NANOSCALE RESEARCH LETTERS|
|Appears in Collections:||Articles|
Files in This Item: