標題: High performance of graphene oxide-doped silicon oxide-based resistance random access memory
作者: Zhang, Rui
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Chen, Kai-Huang
Lou, Jen-Chung
Chen, Jung-Hui
Young, Tai-Fa
Shih, Chih-Cheng
Yang, Ya-Liang
Pan, Yin-Chih
Chu, Tian-Jian
Huang, Syuan-Yong
Pan, Chih-Hung
Su, Yu-Ting
Syu, Yong-En
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: High performance;Graphene oxide;RRAM;Hopping conduction
公開日期: 21-十一月-2013
摘要: In this letter, a double active layer (Zr:SiO (x) /C:SiO (x) ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO (x) layer. Compared with single Zr:SiO (x) layer structure, Zr:SiO (x) /C:SiO (x) structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.
URI: http://dx.doi.org/10.1186/1556-276X-8-497
http://hdl.handle.net/11536/23253
ISSN: 1556-276X
DOI: 10.1186/1556-276X-8-497
期刊: NANOSCALE RESEARCH LETTERS
Volume: 8
Issue: 
結束頁: 
顯示於類別:期刊論文


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