標題: Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment
作者: Jhu, Jhe-Ciou
Chang, Ting-Chang
Chang, Geng-Wei
Tai, Ya-Hsiang
Tsai, Wu-Wei
Chiang, Wen-Jen
Yan, Jing-Yi
光電工程學系
Department of Photonics
公開日期: 28-十一月-2013
摘要: An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N2O plasma treatment. Experimental verification shows that the N2O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N2O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N2O plasma treatment is much lower than that in as-fabricated devices. The N2O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4832327
http://hdl.handle.net/11536/23251
ISSN: 0021-8979
DOI: 10.1063/1.4832327
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 114
Issue: 20
結束頁: 
顯示於類別:期刊論文


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