Title: Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N2O plasma treatment
Authors: Jhu, Jhe-Ciou
Chang, Ting-Chang
Chang, Geng-Wei
Tai, Ya-Hsiang
Tsai, Wu-Wei
Chiang, Wen-Jen
Yan, Jing-Yi
Department of Photonics
Issue Date: 28-Nov-2013
Abstract: An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N2O plasma treatment. Experimental verification shows that the N2O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N2O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N2O plasma treatment is much lower than that in as-fabricated devices. The N2O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4832327
ISSN: 0021-8979
DOI: 10.1063/1.4832327
Volume: 114
Issue: 20
End Page: 
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