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dc.contributor.authorChang, Chia-Tsungen_US
dc.contributor.authorHuang, Chun-Yuen_US
dc.contributor.authorLi, Yu-Renen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:33:24Z-
dc.date.available2014-12-08T15:33:24Z-
dc.date.issued2013-12-01en_US
dc.identifier.issn0924-4247en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sna.2013.08.040en_US
dc.identifier.urihttp://hdl.handle.net/11536/23218-
dc.description.abstractA novel gas ionization sensor (GIS) of the carbon nanotube (CNT) film using the Co-Ti/Ti co-deposited catalyst layer had been proposed for the first time to exhibit higher stability and better reproducibility with respect to the CNT film ones with the single catalyst layer. For the proposed CNT GIS, the variation of the breakdown voltage (V-br) was less than 25% for the ten devices with the same structure measurement since the lengths of the CNT synthesized were uniform and aligned. Besides, the fluctuation of the V-br was about 14% during 1000 operation times in nitrogen at the pressure of 0.035 Torr. It was attributed to the adhesion between CNTs and the substrate could be improved since the co-deposited catalyst layer and Ti adhesion layer would be coalesced so that the Co nanoparticles would be partially immersed into Ti layer after hydrogen pretreatment. Such a CNT GIS with the co-deposited catalyst layer also exhibited high sensitivity and selectivity for different kinds of gases detection as well as the good linearity for detecting the gas mixture. (C) 2013 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectGas ionization characteristics (GIS)en_US
dc.subjectCarbon nanotube (CNT)en_US
dc.subjectBreakdown voltageen_US
dc.titleImproving the stability and reproducibility of the carbon nanotube gas ionization sensor by Co-Ti/Ti co-deposited catalyst layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sna.2013.08.040en_US
dc.identifier.journalSENSORS AND ACTUATORS A-PHYSICALen_US
dc.citation.volume203en_US
dc.citation.issueen_US
dc.citation.spage137en_US
dc.citation.epage141en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000327916300019-
dc.citation.woscount2-
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