Title: Enhancement of the light-scattering ability of Ga-doped ZnO thin films using SiOx nano-films prepared by atmospheric pressure plasma deposition system
Authors: Chang, Kow-Ming
Ho, Po-Ching
Ariyarit, Atthaporn
Yang, Kuo-Hui
Hsu, Jui-Mei
Wu, Chin-Jyi
Chang, Chia-Chiang
Department of Electronics Engineering and Institute of Electronics
Keywords: Transparent conductive oxide;Light-trapping effect;Atmospheric pressure plasma
Issue Date: 2-Dec-2013
Abstract: To enhance the light-trapping qualities of silicon thin-film solar cells, the use of transparent conductive oxide with high haze and high conductivity is essential. This study investigated an eco-friendly technique that used bilayer Ga-doped zinc oxide/SiOx films prepared with an atmospheric pressure plasma jet to achieve high haze and low resistivity. A minimum resistivity of 6.00 x 10(-4) Omega.cm was achieved at 8 at.% gallium doping. Examination of X-ray diffraction spectra showed that increased film thickness led to increased carrier concentration in GZO bilayers. The optimal bilayer GZO film achieved considerably higher haze values in the visible and NIR regions, compared with Asahi U-type fluorine doped tin oxide. (C) 2013 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2013.09.082
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2013.09.082
Volume: 548
Begin Page: 460
End Page: 464
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