Title: Investigation on plasma treatment for transparent Al-Zn-Sn-O thin film transistor application
Authors: Chang, Chih-Hsiang
Liu, Po-Tsun
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
Keywords: Thermal annealing;AlZnSnO TFT;Plasma post treatment;Oxygen bonding;Reliability mechanism
Issue Date: 31-Dec-2013
Abstract: This work reported the physical characteristics and electrical performance of amorphous Al-Zn-Sn-O thin film transistor (a-AZTO TFT) device under the temperature effects of thermal annealing process and various gas plasma post-treatments. The thermal annealing at 450 degrees C could strengthen the oxygen bonding of a-AZTO film, thereby improving the film quality and TFT device performance. In addition, the oxygen deficient can be reduced effectively by the O-2 and N2O plasma treatments, respectively, leading to enhanced electrical reliability. Also, the optical energy gap of a-AZTO films with O-2 or N2O plasma treatment was measured about 3.5 eV, which indicated that all of the a-AZTO films were insensitive to visible light. On the other hand, the electron mobility of a-AZTO TFT was observed to be promoted after NH3 plasma post-treatment. The improvement could be attributed to a slight doping effect of H+ ions. These results showed the potential of post-treatments for flat panel displays applications of transparent a-AZTO TFT technology. (C) 2013 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2013.06.042
http://hdl.handle.net/11536/23199
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2013.06.042
Journal: THIN SOLID FILMS
Volume: 549
Issue: 
Begin Page: 36
End Page: 41
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