標題: UV Enhanced Oxygen Response Resistance Ratio of ZnO Prepared by Thermally Oxidized Zn on Sapphire Substrate
作者: Yu, Cheng-Chang
Hsu, Yu-Ting
Lan, Wen-How
Shih, Ming-Chang
Hong, Jin-Hua
Huang, Kai-Feng
Huang, Chien-Jung
電子物理學系
Department of Electrophysics
公開日期: 2013
摘要: ZnO thin film was fabricated by thermally oxidized Zn at 600 degrees C for 1 h. A surface containing nanostructured dumbbell and lines was observed by scanning electron microscope (SEM). The ZnO resistor device was formed after the following Ti/Aumetallization. The device resistance was characterized at different oxygen pressure environment in the dark and under ultraviolet (UV) light illumination coming from the mercury lamp with a short pass filter. The resistance increases with the increase of oxygen pressure. The resistance decreases and response increases with the increase of light intensity. Models considering the barrier height variation caused by the adsorbed oxygen related species were used to explain these results. The UV light illumination technology shows an effective method to enhance the detection response for this ZnO resistor oxygen sensor.
URI: http://hdl.handle.net/11536/23172
http://dx.doi.org/10.1155/2013/531328
ISSN: 1687-4110
DOI: 10.1155/2013/531328
期刊: JOURNAL OF NANOMATERIALS
顯示於類別:期刊論文


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