標題: The integration of Ge and III-V materials on GaAs and Si for Post CMOS applications
作者: Chang, Edward Yi
Chang, Chia Hua
Tang, Shih Hsuan
Hai Dang Trinh
Kuo, Chien I.
Hsu, Ching Yi
Su, Yung Hsuan
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2012
摘要: In the study, the growth of InAs on Si is demonstrated using "interface blocking" technique with SiGe layers as buffer layer. And the growth of high quality Ge film on GaAs is demonstrated using ultra high vacuum chemical vapor deposition (UHVCVD). Both Ge film grown on GaAs and InAs film grown on Si substrate demonstrate high crystallinity and good surface morphology as observed by XRD and AFM. Furthermore, the fabrication process and electric characteristics of Ge/GaAs and InAs/Si is discussed in the study. The developed epitaxial materials systems and device fabrication including InAs on Si, Ge on GaAs are useful for future III-V and Ge integration on Si substrate for next generation high speed low power CMOS as well as for RF/digital mixed signal circuit applications in the future.
URI: http://hdl.handle.net/11536/23149
http://dx.doi.org/10.1149/1.3694389
ISBN: 978-1-60768-318-6
ISSN: 1938-5862
DOI: 10.1149/1.3694389
期刊: CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012)
Volume: 44
Issue: 1
起始頁: 715
結束頁: 720
Appears in Collections:Conferences Paper


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